发明名称 METAL-NITRIDE THERMISTOR MATERIAL, MANUFACTURING METHOD THEREFOR, AND FILM-TYPE THERMISTOR SENSOR
摘要 <p>Provided are a metal nitride material for a thermistor, which has a high reliability and a high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: Cr x Al y (N 1-w O w ) z (where 0.70 ‰¤ y/(x+y) ‰¤ 0.95, 0.45 ‰¤ z ‰¤ 0.55, 0 < w ‰¤ 0.35, and x+y+z = 1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.</p>
申请公布号 KR20150100678(A) 申请公布日期 2015.09.02
申请号 KR20157016309 申请日期 2013.12.04
申请人 MITSUBISHI MATERIALS CORP. 发明人 FUJITA TOSHIAKI;TANAKA HIROSHI;NAGATOMO NORIAKI
分类号 H01C7/00;C23C14/00;C23C14/06;H01C7/04 主分类号 H01C7/00
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