发明名称 SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME
摘要 <p>A semiconductor memory device includes: a memory cell array, and a data inversion circuit. The data inversion circuit receives first and second unit data stored in the memory cell array through first data lines different from each other. In addition, during the first unit data is transmitted to an input and output buffer through a second data line, the data inversion circuit transmits the input and output buffer through the second data line by determining whether the second unit data is reversed or not based on the number of toggling of responding bits in the first unit data and second unit data.</p>
申请公布号 KR20150099928(A) 申请公布日期 2015.09.02
申请号 KR20140021092 申请日期 2014.02.24
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JANG, MIN SOO;HAN, GONG HEUM;PARK, CHUL SUNG;RYU, JANG WOO;LEE, CHANG YONG;JANG, TAE SEONG
分类号 G11C11/4096;G11C11/4093 主分类号 G11C11/4096
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