| 摘要 |
<p>The present invention relates to a method for manufacturing an organic light emitting display device and, more specifically to a method for manufacturing an organic light emitting display device including the following steps: a) forming a gate electrode on a substrate; b) forming a gate insulating layer on the substrate with the gate electrode; c) forming an activating layer on the gate insulating layer; d) forming an insulating layer on the activating layer; e) forming a source and a drain electrode in contact with the activating layer on the insulating layer; f) forming a passivation layer to cover the source and drain electrodes on the insulating layer; g) forming an organic light emitting diode electrically connected to either the source electrode or the drain electrode. The step a) includes a step of forming aluminum-based, molybdenum-based, and silver-based metal films and a laminated film thereof and forming the gate electrode by etching the metal films with the composition of an etchant including 60-70 wt% of phosphoric acid, 2-8 wt% of nitric acid, 5-15 wt% of acetic acid, 0.1-7 wt% of a potassium-based compound, and residual water, thereby enabling the uniform formation of the gate electrode having less side etch, no residual for recovery, and an appropriate taper angle, so the organic light emitting display device having superior electrical characteristics can be manufactured.</p> |
