| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoresist composition which satisfies a basic characteristic such as sensitivity, and has a lithographic characteristic which is excellent in DOF while maintaining MEEF at a suitable value.SOLUTION: The photoresist composition includes: (A) a polymer having a structural unit (I) containing one acid-dissociable group, and a structural unit (II) containing two or more acid-dissociable groups; and (B) an acid generator. The structural unit (I) is represented by the formula (1) and the structural unit (II) is represented by the formula (2). |
