发明名称 SEMICONDUCTOR DEVICES WITH IMPROVED RELIABILITY AND OPERATING LIFE AND METHODS OF MANUFACTURING THE SAME
摘要 <p>Methods for manufacturing semiconductor wafer structures are described which exhibit improved lifetime and reliability. The methods comprise transferring an active semiconductor layer structure from a native non-lattice-matched semiconductor growth substrate to a working substrate, wherein strain-matching layers, and optionally a portion of the active semiconductor layer structure, are removed. In certain embodiment, the process of attaching the active semiconductor layer structure to the working substrate includes annealing at an elevated temperature for a specified time. The methods as described herein can be used to fabricate working semiconductor wafer structures which have a low concentration of dislocation defects throughout the active semiconductor layer structure and which do not comprise highly dislocated strain-matching layers which are present in the native semiconductor growth substrate</p>
申请公布号 EP2912685(A1) 申请公布日期 2015.09.02
申请号 EP20130793010 申请日期 2013.10.25
申请人 ELEMENT SIX TECHNOLOGIES US CORPORATION 发明人 FRANCIS, DANIEL;BABIC, DUBRAVKO;NASSER-FAILI, FIROOZ;EJECKAM, FELIX;DIDUCK, QUENTIN;SMART, JOSEPH;MATTHEWS, KRISTOPHER;LOWE, FRANK
分类号 H01L21/762 主分类号 H01L21/762
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