Method for managing the operation of a memory device having a SRAM memory plane and a non volatile memory plane, and corresponding memory device

摘要

A method can be used for managing the operation of a memory cell that includes an SRAM elementary memory cell and a non-volatile elementary memory cell coupled to one another. A data bit is transferred between the SRAM elementary memory cell and the non-volatile elementary memory cell. A control datum is stored in a control memory cell that is functionally analogous to and associated with the memory cell. The data bit is read from the SRAM elementary memory cell and a corresponding read of the control datum is performed. The data bit read from the SRAM elementary memory cell is inverted if the control datum has a first value but the data bit read from the SRAM elementary memory cell is not inverted if the control datum has a second value.

主权项

1. A method for managing the operation of a memory cell that comprises an SRAM elementary memory cell and a non-volatile elementary memory cell coupled to one another, the method comprising:
transferring a data bit between the SRAM elementary memory cell and the non-volatile elementary memory cell; storing a control datum in a control memory cell that is functionally analogous to and associated with the memory cell; reading the data bit from the SRAM elementary memory cell; performing a corresponding read of the control datum; and inverting the data bit read from the SRAM elementary memory cell if the control datum has a first value while not inverting the data bit read from the SRAM elementary memory cell if the control datum has a second value.