Compositions for solution process, electronic devices fabricated using the same, and fabrication methods thereof

摘要

Exemplary embodiments provide compositions for a solution process, electronic devices fabricated using the same, and fabrication methods thereof. An oxide nano-structure is formed using a sol-gel process. An oxide thin film transistor is formed using the oxide nano-structure.

主权项

1. A composition for an oxide thin film, comprising:
a zinc compound; and at least one non-zinc compound selected from the group consisting of a hafnium compound, a zirconium compound, a magnesium compound, and an yttrium compound, wherein a mole ratio of the zinc compound to the at least one non-zinc compound is about 1:0.1 to about 1:2, wherein a molar concentration of the zinc compound, the hafnium compound, the zirconium compound, the magnesium compound or the yttrium compound is about 0.1 mol/l (M) to about 10 mol/l (M).