Chip with through silicon via electrode and method of forming the same

摘要

The present invention provides a method of forming a chip with TSV electrode. A substrate with a first surface and a second surface is provided. A thinning process is performed from a side of the second surface so the second surface becomes a third surface. Next, a penetration via which penetrates through the first surface and the third surface is formed in the substrate. A patterned material layer is formed on the substrate, wherein the patterned material layer has an opening exposes the penetration via. A conductive layer is formed on the third surface thereby simultaneously forming a TSV electrode in the penetration via and a surface conductive layer in the opening.

主权项

1. A chip with a through-silicon-via (TSV) electrode, comprising:
a substrate, which has an active surface and a back surface; a penetration via disposed in the substrate, wherein the penetration via penetrates through the active surface and the back surface; a TSV electrode disposed in the penetration via; a surface conductive layer disposed on the back surface outside the penetration via and directly contacting the back surface, wherein the surface conductive layer is a redistribution layer, and the surface conductive layer and the TSV electrode are monolithic; and an integrated passive device (IPD) disposed on the back surface, the IPD comprising the surface conductive layer.