Nanowire field-effect transistor and method for manufacturing same

摘要

Provided are a nanowire field-effect transistor and a method for manufacturing the same. The nanowire field-effect transistor can enable a source region to be positioned, with respect to an asymmetrical nanowire channel, adjacent to a region in which the diameter of the nanowire channel is large, can enable a drain region to be positioned adjacent to a region in which the diameter of the nanowire channel is small, can enable an ON current to be increased in a state in which a threshold voltage level is kept the same, and can enable the current drivability of a gate electrode to be improved.

主权项

1. A nanowire field-effect transistor comprising:
an asymmetrical nanowire channel whose both ends have mutually different diameters; a source region that is adjacent to a region in which the diameter of the nanowire channel is large; a drain region that is adjacent to a region in which the diameter of the nanowire channel is small; a gate electrode that encloses the nanowire channel; and a gate insulation film that is positioned between the nanowire channel and the gate electrode.