N/P boundary effect reduction for metal gate transistors

摘要

The present disclosure provides a device having a doped active region disposed in a substrate. The doped active region having an elongate shape and extends in a first direction. The device also includes a plurality of first metal gates disposed over the active region such that the first metal gates each extend in a second direction different from the first direction. The plurality of first metal gates includes an outer-most first metal gate having a greater dimension measured in the second direction than the rest of the first metal gates. The device further includes a plurality of second metal gates disposed over the substrate but not over the doped active region. The second metal gates contain different materials than the first metal gates. The second metal gates each extend in the second direction and form a plurality of respective N/P boundaries with the first metal gates.

主权项

1. A semiconductor device, comprising:
a first doped active region disposed in a substrate, wherein the first doped active region extends in a first direction; a second doped active region disposed in a substrate, wherein the second doped active region extends in the first direction; a first metal gate disposed over the first doped active region, wherein the first metal gate has a first dimension measured in a second direction different from the first direction; a second metal gate disposed over the first doped active region, wherein the second metal gate has a second dimension measured in the second direction, the first and second dimensions being different; a third metal gate disposed over the second doped active region, wherein the third metal gate has a third dimension measured in the second direction; and a fourth metal gate disposed over the second doped active region, wherein the fourth metal gate has a fourth dimension measured in the second direction, the third and fourth dimensions being different, and wherein the first metal gate and the second metal gate each include a first type work function metal, and wherein the third metal gate and the fourth metal gate each include a second type work function metal that is opposite the first type work function metal.