Methods of forming layer patterns of a semiconductor device

摘要

A method of manufacturing a layer pattern of a semiconductor device, the method including forming an anti-reflective coating (ARC) layer on an etching object layer such that the ARC layer includes a polymer having an imide group; forming a photoresist pattern on the ARC layer; wet etching portions of the ARC layer exposed by the photoresist pattern to form an ARC layer pattern; and etching the etching object layer using the photoresist pattern as an etch mask to form the layer pattern.

主权项

1. A method of manufacturing a layer pattern of a semiconductor device, the method comprising:
forming an anti-reflective coating (ARC) layer on an etching object layer such that the ARC layer includes a polymer having an imide group; forming a photoresist pattern on the ARC layer; separately wet etching portions of the ARC layer exposed by the photoresist pattern to form an ARC layer pattern, the wet etching including using a wet etch solution differing from a developing solution used to form the photoresist pattern; and etching the etching object layer using the photoresist pattern as an etch mask to foam the layer pattern.