Multi-level autolimitating etching method

摘要

A method for producing patterns includes inclined flanks from a face of a substrate. A protective mask is formed covering at least two masked areas of the face of the substrate and defining at least one intermediate space. An inclined flank is plasma etched from each masked area, wherein the etching forms continuous passivation layer on the inclined flanks producing autolimitation of the etching when the inclined flanks join each other. The etching is carried out in a chamber and includes the introduction into the chamber of a gas additional to the plasma. The additional gas includes molecules of a chemical species participating in the formation of the passivation layer, the quantity of gas in the chamber being controlled so that the chamber contains a quantity of molecules of the species sufficient to form the passivation layer continuously.

主权项

1. A method for producing patterns comprising inclined flanks from a face of a substrate, comprising
formation of a protective mask covering at least two masked areas of the face of the substrate and defining at least one intermediate space; etching with a plasma forming, on at least one intermediate space, at least one inclined flank from each masked area, wherein the etching comprising the formation of a continuous passivation layer on the inclined flanks producing autolimitation of the etching when the inclined flanks join each other, and wherein the etching is carried out in a chamber and comprises the introduction into the chamber of a gas additional to the plasma, said additional gas comprising molecules of a chemical species participating in the formation of the passivation layer, the quantity of gas in the chamber being controlled so that the chamber contains, throughout the etching, a quantity of molecules of the species sufficient to form the passivation layer continuously, wherein the passivation layer comprises a chemical species of the substrate, and the etching is configured so as to generate molecules of the chemical species of the additional gas during the etching of the substrate.