Magnetoresistive sensor including an amorphous insertion layer excluding glass former elements

摘要

Implementations disclosed herein allow a signal detected by a magnetoresistive (MR) sensor to be improved by providing for one or more alloyed layers that each include a ferromagnetic material and a refractory material. The alloyed layers are provided adjacent to a shield element or between soft magnetic layers of the sensor stack.

主权项

1. A synthetic antiferromagnetic (SAF) element comprising:
a soft magnetic pinned layer; a reference stack; and an RKKY coupling spacer layer adjacent to the pinned layer, and between the pinned layer and the reference stack; the reference stack including a first soft magnetic reference layer with a thickness between 10 and 15 Angstroms, and a second soft magnetic reference layer with a thickness between 10 and 20 Angstroms magnetically coupled together; and an amorphous magnetic alloyed layer adjacent to and between the first reference layer and the second reference layer, the alloyed layer including ferromagnetic material and tantalum at 15-25 atomic % and excluding glass former elements.