Electrode for oxide semiconductor, method of forming the same, and oxide semiconductor device provided with the electrode

摘要

To make it possible to form a metal electrode of low electrical contact resistance on a conductive indium-containing oxide semiconductor layer constituting a device active layer of a thin-film transistor or the like. Between an indium-containing oxide semiconductor layer and a metal electrode layer provided above this layer for passing device operating current, which can reduce indium oxide or the like of the oxide semiconductor layer. A metallic oxide layer and a metal layer are formed using as material a metal film including an easily oxidable metal, and further an indium-rich layer in which reduced indium is accumulated is formed at a boundary between the metallic oxide layer and the metal layer.

主权项

1. An electrode for an oxide semiconductor comprising:
an oxide semiconductor layer comprised of an oxide semiconductor material containing indium (element symbol: In); a metallic oxide layer formed on the oxide semiconductor layer; and a metal electrode layer formed on the metallic oxide layer, wherein a metal layer comprised of the metal of the metallic oxide layer is interposed between the metallic oxide layer and the metal electrode layer and a layer in which indium is concentrated (an indium-rich layer) is formed between the metallic oxide layer and the metal layer, wherein the metal electrode layer is formed from a metal that is more resistant to oxidation than the metal of the metal layer, and wherein the metal electrode layer is formed of pure copper and the metal layer is formed of manganese.