FinFET fabrication method

摘要

Embodiments of the present invention provide an improved method for fabrication of fin field effect transistors (finFETs). Sacrificial regions are formed on a semiconductor substrate. Spacers are formed adjacent to two sides of the sacrificial regions. Fins are formed based on the spacers. One set of spacers is treated as dummy spacers, and is removed prior to fin formation, leaving the other set of spacers to be used for forming fins on the final semiconductor structure. All the fins on the final semiconductor structure are formed from spacers on one side of the sacrificial material. This reduces variation in width of the fins.

主权项

1. A method of forming a semiconductor structure, comprising:
forming a nitride liner on a semiconductor substrate; forming a plurality of sacrificial material regions on the nitride liner; forming a first set of spacers on a first side of each of the sacrificial material regions and a second set of spacers on a second side of each of the sacrificial material regions; removing the plurality of sacrificial material regions; removing each of the second set of spacers while preserving the first set of spacers; and forming fins on the semiconductor substrate.