| 发明名称 | Chemical mechanical polishing slurry compositions and polishing method using the same | ||
| 摘要 | Disclosed herein is a CMP slurry composition. The CMP slurry composition includes cerium oxide particles, an adsorbent for adsorbing the cerium oxide particles to a polishing pad, an adsorption adjusting agent for adjusting adsorption performance of the adsorbent, and a pH adjusting agent. The CMP slurry composition may improve polishing efficiency of a patterned oxide layer and lifespan of a diamond disc conditioner. | ||
| 申请公布号 | US9123660(B2) | 申请公布日期 | 2015.09.01 |
| 申请号 | US201213534647 | 申请日期 | 2012.06.27 |
| 申请人 | Cheil Industries Inc. | 发明人 | Kim Tai Young;Choi Byoung Ho;Hong Chang Ki;Kim Hyung Soo |
| 分类号 | C09G1/02;C09K3/14;H01L21/3105 | 主分类号 | C09G1/02 |
| 代理机构 | Additon, Higgins & Pendleton, P.A. | 代理人 | Additon, Higgins & Pendleton, P.A. |
| 主权项 | 1. A CMP slurry composition comprising: cerium oxide particles; an adsorbent for adsorbing the cerium oxide particles to a polishing pad, wherein the adsorbent comprises 3-hydroxy-1,2-dimethyl-4(1H)-pyridone, 2-hydroxy-3,5-dinitropyridine, 3 or a combination thereof; an adsorption adjusting agent for adjusting adsorption performance of the adsorbent; and a pH adjusting agent. | ||
| 地址 | Gumi-si KR | ||