| 发明名称 | Method for transferring InP film | ||
| 摘要 | A method for transferring InP film onto a stiffener substrate, the method including: providing a structure comprising an InP surface layer and an underlying doped thin InP layer; implanting hydrogen ions through the surface layer so as to create a weakened plane in the doped thin layer, delimiting a film comprising the surface layer; placing the surface layer in close contact with a stiffener substrate; and applying heat treatment to obtain splitting at the weakened plane and transfer of the film onto the stiffener substrate. | ||
| 申请公布号 | US9123641(B2) | 申请公布日期 | 2015.09.01 |
| 申请号 | US201313974347 | 申请日期 | 2013.08.23 |
| 申请人 | COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES | 发明人 | Tauzin Aurelie |
| 分类号 | H01L21/265;H01L21/762 | 主分类号 | H01L21/265 |
| 代理机构 | Cantor Colburn LLP | 代理人 | Cantor Colburn LLP |
| 主权项 | 1. A method for transferring an InP film onto a stiffener substrate, the method comprising: a) Providing a structure comprising a surface layer of InP and an underlying doped thin InP layer; b) Implanting hydrogen ions through the surface layer so as to create a weakened plane in the doped thin layer, delimiting a film comprising the surface layer, c) Placing the surface layer in close contact with a stiffener substrate; and d) Applying heat treatment to obtain splitting at the weakened plane and transfer of the film onto the stiffener substrate. | ||
| 地址 | FR | ||