研磨剂、研磨方法及半导体积体电路装置之制造方法;POLISHING AGENT, POLISHING METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

本发明提供一种可抑制于包含氧化矽、氮化矽等膜之被研磨面产生研磨痕，且以较高之研磨速度进行CMP之研磨剂、及研磨方法。;本发明之研磨剂含有氧化铈粒子与水，且关于上述氧化铈粒子，其根据IR光谱之3566cm -1 之吸光度I与3695cm -1 之吸光度I'的比(3900cm -1 基准)、及微晶直径XS而求出之值A(=(I/I')/XS)为0.08以下。又，本发明之研磨剂之上述氧化铈粒子之根据晶格常数之理论值a'与利用粉末X射线绕射所测定之晶格常数a而求出的偏差值B(%)(=(1-a/a')×100)为-0.16%以上，且平均二次粒径D'为90nm以上且500nm以下。; and water, wherein, in IR spectrum of the cerium oxide particle, a value A found by a formula below from a ratio (I/I’) between a value I of an absorbance of 3566 cm -1 and a value I’;A second polishing agent contains: cerium oxide particles; and water, wherein, in the cerium oxide particle, a deviation B of a lattice constant found by a formula below from a theoretical lattice constant (a’) and a lattice constant (a) measured by powder X-ray diffraction, is -0.16% or more. B (%) = (1 - a /a’) ×