Magnetic tunnel junction device

摘要

The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared as follows: A single-crystalline MgO (001) substrate is prepared. An epitaxial Fe(001) lower electrode (a first electrode) is grown on a MgO(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum. A MgO(001) barrier layer is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) is then formed on the MgO(001) barrier layer at room temperature. This is successively followed by the deposition of a Co layer on the Fe(001) upper electrode (the second electrode). The Co layer is provided so as to increase the coercive force of the upper electrode in order to realize an antiparallel magnetization alignment.

主权项

1. A tunnel barrier layer disposed on a ferromagnetic material layer that is disposed on a substrate,
wherein the tunnel barrier layer comprises a poly-crystalline magnesium oxide layer in which a (001) crystal plane is preferentially oriented, wherein the tunnel barrier layer has a barrier height φ in a range of 0.2 to 0.5 e V, where the barrier height φ is obtained by fitting J-V characteristics of a tunnel barrier junction structure to an equation (1):
J=[(2mφ)1/2/Δs](e/h)2×exp[−(4πΔs/h)×(2mφ)1/2]×V  (1) where J is a tunnel current density flowing through the tunnel barrier layer, V is an applied bias voltage that is 100 mV or smaller, m is the free electron mass, e is the elementary electric charge, h is the Plank's constant, Δs is an effective thickness of the tunnel barrier layer that is approximately equivalent to (tMgO−0.5 nm), and tMgO is an actual thickness of the tunnel barrier layer determined using a cross-sectional transmission electron microscope image, and wherein the ferromagnetic material layer comprises CoFeB alloy that is at least partially crystallized.