Method for device packaging

摘要

A method for fabricating a flip-chip semiconductor package. The method comprises processing a semiconductor device, for example a semiconductor chip and processing a device carrier, for example a substrate. The semiconductor device comprises bump structures formed on a surface thereof. The substrate comprises bond pads formed on a surface thereof. Processing of the semiconductor chip results in heating of the semiconductor chip to a chip process temperature. The chip process temperature melts solder portions on the bump structures Processing of the substrate results in heating of the substrate to a substrate process temperature. The method comprises spatially aligning the semiconductor chip in relation to the substrate to correspondingly align the bump structures in relation to the bump pads. The semiconductor chip is then displaced towards the substrate for abutting the bump structures of the semiconductor chip with the bond pads of the substrate to thereby form bonds therebetween. A system for performing the above method is also disclosed.

主权项

1. A method for device packaging, the method comprising:
heating a semiconductor device to a first temperature, the semiconductor device comprising a plurality of bump structures, each of the plurality of bump structures comprising a solder portion, the first temperature being at least the melting temperature of the solder portion of each of the plurality of bump structures to bring the solder portion to a molten state; heating a substrate to a second temperature, the substrate comprising a plurality of contact pads, the semiconductor device and the substrate disposed at a distance from each other during heating thereof to the first and second temperatures respectively; spatially aligning the plurality of bump structures with the plurality of contact pads; determining a distance between the semiconductor device and substrate; and displacing the semiconductor device and the substrate relative to each other across a displacement distance that includes the determined distance subsequent the heating of the semiconductor device and the substrate for abutting the solder portion of each of the plurality of bump structures with a corresponding one of the plurality of contact pads, wherein the displacement distance comprises the determined distance and a compression offset value.