制备薄膜电晶体阵列之方法;METHOD OF PREPARING ARRAY OF THIN FILM TRANSISTOR

摘要

本发明揭示一种制备薄膜电晶体阵列之方法。具体言之，本发明揭示一种蚀刻剂组成物，其包括：5wt%至25wt%过氧化氢；0.05wt%至1wt%含氟化合物；0.5wt%至3wt%芳族有机酸或其盐；及余量水，从而选择性地蚀刻钼基金属膜或金属氧化物膜，及一种使用该组成物制备薄膜电晶体阵列之方法。; 0.05 to 1 wt.% of a fluorine-containing compound; 0.5 to 3 wt.% of aromatic organic acid or a salt thereof; and the balance of water, so as to selectively etch a molybdenum-based metal film or metal oxide film, and a method of preparing an array of a thin film transistor using the same.