Vibration device

摘要

A vibration device includes a semiconductor device, a first electrode and a second electrode located in a first surface of the semiconductor device, a vibration element, a third electrode and a fourth electrode located in a first surface of the vibration element, a first connection section that connects the first electrode and the third electrode, and a second connection section that connects the second electrode and the fourth electrode. The semiconductor device and the vibration element have mutually different thermal expansion coefficients. The vibration element has a coupling section located between the third electrode and the fourth electrode, and the coupling section has at least one bend section located between the third electrode and the fourth electrode.

主权项

1. A vibration device comprising:
a semiconductor device; a first electrode and a second electrode located in a first surface of the semiconductor device; a vibration element; a third electrode and a fourth electrode located in a first surface of the vibration element; a first connection section that connects the first electrode and the third electrode; and a second connection section that connects the second electrode and the fourth electrode, the semiconductor device and the vibration element having different thermal expansion coefficients, the vibration element having a coupling section located between the third electrode and the fourth electrode, and the coupling section having at least one bend section located between the third electrode and the fourth electrode.