发明名称 Semiconductor light-emitting element
摘要 A semiconductor light-emitting element capable of increasing a strength of adhesion between an electrode and a protection film.;The semiconductor light-emitting element includes a semiconductor structure having an n-type semiconductor layer and a p-type semiconductor layer. A transparent conductive film is disposed on the p-type semiconductor layer. An insulation film is disposed on the transparent conductive film. A p-side electrode layer is disposed on the insulation film. A protection film is disposed over the insulation film, and the protection film covers part of the p-side electrode layer.
申请公布号 US9123864(B2) 申请公布日期 2015.09.01
申请号 US201314072359 申请日期 2013.11.05
申请人 NICHIA CORPORATION 发明人 Tomonari Masakatsu;Ogawa Toshiaki;Minato Shunsuke
分类号 H01L27/15;H01L29/26;H01L31/12;H01L33/00;H01L29/267;H01L27/14;H01L23/48;H01L23/52;H01L29/40;H01L33/38;H01L21/02;H01L21/768;H01L21/28;H01L23/532;H01L23/28;H01L23/00;H01L33/42;H01L33/44 主分类号 H01L27/15
代理机构 Squire Patton Boggs (US) LLP 代理人 Squire Patton Boggs (US) LLP
主权项 1. A semiconductor light-emitting element comprising: a semiconductor structure having a first semiconductor layer and a second semiconductor layer, the second semiconductor layer being disposed above the first semiconductor layer; a transparent conductive film disposed on the second semiconductor layer; an insulation film defining a first through hole and a second through hole, the first through hole and the second through hole exposing the transparent conductive film, the insulation film being disposed on the transparent conductive film; an electrode disposed on the insulation film and electrically connected to the transparent conductive film through the first through hole; and a protection film disposed over the insulation film, the protection film contacting with the transparent conductive film through the second through hole, and wherein the protection film covers part of the electrode.
地址 Anan-Shi, Tokushima JP