Transistors including a channel where first and second regions have less oxygen concentration than a remaining region of the channel, methods of manufacturing the transistors, and electronic devices including the transistors

摘要

According to example embodiments, a transistor may include a gate electrode, a gate insulating layer, and a channel layer stacked on each other; and a source electrode and a drain electrode contacting first and second regions of the channel layer, respectively. The channel layer may include metal oxynitride. The first and second regions of the channel layer may be treated with a plasma containing hydrogen, and the first and second regions have a higher carrier concentration than a carrier concentration of a remaining region of the channel layer. The first and second regions of the channel layer may have a lower oxygen concentration and a higher nitrogen concentration than that of the remaining region thereof. The metal oxynitride of the channel layer may include a zinc oxynitride (ZnON)-based semiconductor.

主权项

1. A transistor comprising:
a gate electrode, a gate insulating layer, and a channel layer stacked on each other,
the channel layer facing the gate electrode,the channel layer including metal oxynitride,the channel layer including first and second regions that are plasma treated regions and have a higher carrier concentration than a carrier concentration in a remaining region of the channel layer,the gate insulating layer between the channel layer and the gate electrode; and a source electrode and a drain electrode contacting the first and second regions of the channel layer, respectively, wherein an oxygen concentration of the first and second regions of the channel layer is less than an oxygen concentration than that of the remaining region of the channel layer.