Methods for forming a hydrogen free silicon containing dielectric film

摘要

Embodiments of the disclosure generally provide methods of forming a hydrogen free silicon containing layer in TFT devices. The hydrogen free silicon containing layer may be used as a passivation layer, a gate dielectric layer, an etch stop layer, or other suitable layers in TFT devices, photodiodes, semiconductor diode, light-emitting diode (LED), or organic light-emitting diode (OLED), or other suitable display applications. In one embodiment, a method for forming a hydrogen free silicon containing layer in a thin film transistor includes supplying a gas mixture comprising a hydrogen free silicon containing gas and a reacting gas into a plasma enhanced chemical vapor deposition chamber, wherein the hydrogen free silicon containing gas is selected from a group consisting of SiF4, SiCl4, Si2Cl6, and forming a hydrogen free silicon containing layer on the substrate in the presence of the gas mixture.

主权项

1. A method for forming a hydrogen free silicon containing layer in a thin film transistor comprising:
supplying a gas mixture comprising a hydrogen free silicon containing gas and a reacting gas into a plasma enhanced chemical vapor deposition chamber, wherein the hydrogen free silicon containing gas is selected from a group consisting of SiCl4and Si2Cl6, wherein the hydrogen free silicon containing gas and the reacting gas are supplied at a gas flow ratio between greater than 10:1 and about 60:1 by volume; and forming a hydrogen free silicon containing layer on the substrate in the presence of the gas mixture.