发明名称 |
Power semiconductor module |
摘要 |
A power semiconductor module available under environments of high temperature has enhanced heat resistance of silicone gel filled up in a case. A power semiconductor module comprises a power semiconductor element, an insulating substrate mounted with the power semiconductor element, a resin case containing the power semiconductor element and the insulating substrate, a silicone gel injected into the resin case, and a sheet composed of a silicone rubber or silicone resin, disposed between the resin case and the silicone gel within the resin case. |
申请公布号 |
US9123639(B2) |
申请公布日期 |
2015.09.01 |
申请号 |
US201414512372 |
申请日期 |
2014.10.10 |
申请人 |
FUJI ELECTRIC CO., LTD. |
发明人 |
Kimijima Daisuke;Ichimura Yuji |
分类号 |
H01L23/24;H01L29/739 |
主分类号 |
H01L23/24 |
代理机构 |
Rabin & Berdo, P.C. |
代理人 |
Rabin & Berdo, P.C. |
主权项 |
1. A power semiconductor module comprising:
a power semiconductor element; an insulating substrate mounted with the semiconductor element; a resin case containing the power semiconductor element and the insulating substrate; a silicone gel injected into the resin case; and a sheet composed of a silicone rubber or a silicone resin, disposed between the resin case and the silicone gel. |
地址 |
Kawasaki-Shi JP |