发明名称 Power semiconductor module
摘要 A power semiconductor module available under environments of high temperature has enhanced heat resistance of silicone gel filled up in a case. A power semiconductor module comprises a power semiconductor element, an insulating substrate mounted with the power semiconductor element, a resin case containing the power semiconductor element and the insulating substrate, a silicone gel injected into the resin case, and a sheet composed of a silicone rubber or silicone resin, disposed between the resin case and the silicone gel within the resin case.
申请公布号 US9123639(B2) 申请公布日期 2015.09.01
申请号 US201414512372 申请日期 2014.10.10
申请人 FUJI ELECTRIC CO., LTD. 发明人 Kimijima Daisuke;Ichimura Yuji
分类号 H01L23/24;H01L29/739 主分类号 H01L23/24
代理机构 Rabin & Berdo, P.C. 代理人 Rabin & Berdo, P.C.
主权项 1. A power semiconductor module comprising: a power semiconductor element; an insulating substrate mounted with the semiconductor element; a resin case containing the power semiconductor element and the insulating substrate; a silicone gel injected into the resin case; and a sheet composed of a silicone rubber or a silicone resin, disposed between the resin case and the silicone gel.
地址 Kawasaki-Shi JP