Semiconductor device

摘要

A semiconductor device of an embodiment is provided with a normally-off transistor having a first source connected to a source terminal, a first drain, and a first gate connected to a gate terminal and a normally-on transistor having a second source connected to the first drain, a second drain connected to a drain terminal, and a second gate connected to the source terminal. A withstand voltage between the first source and the first drain when the normally-off transistor is turned off is lower than a withstand voltage between the second source and the second gate of the normally-on transistor.

主权项

1. A semiconductor device, comprising:
a normally-off transistor having a first source connected to a source terminal, a first drain, and a first gate connected to a gate terminal; a normally-on transistor having a second source connected to the first drain, a second drain connected to a drain terminal, and a second gate connected to the source terminal; a Zener diode having a first anode connected to the first source and a first cathode connected to the first drain and the second source, the Zener diode having a Zener voltage lower than an avalanche breakdown voltage of the normally-off transistor; a diode provided between the first drain and the Zener diode, the diode having a second anode connected to the first drain and a second cathode connected to the first cathode; and a capacitor having a first end and a second end, the first end being connected to the first cathode and the second cathode, and the second end being connected to the first source and the first anode, the capacitor being provided in parallel with the Zener diode, wherein a withstand voltage between the first source and the first drain when the normally-off transistor is turned off is lower than the withstand voltage between the second source and the second gate of the normally-on transistor.