发明名称 Infrared detectors
摘要 In some example embodiments, an infrared detector may comprise a substrate; a resonator spaced apart from the substrate, the resonator absorbing incident infrared light; a thermoelectric material layer contacting the resonator and having a variable resistance according to temperature variation due to the absorbed incident infrared light; a lead wire electrically connecting the thermoelectric material layer and the substrate; a heat separation layer between the substrate and the thermoelectric material layer, the heat separation layer preventing heat from being transferred from the thermoelectric material layer to the substrate; and/or a ground plane layer preventing the incident infrared light from proceeding toward the substrate. The heat separation layer may at least reduce heat transfer from the thermoelectric material layer to the substrate. The ground plane layer may at least reduce an amount of the incident infrared light that reaches the substrate.
申请公布号 US9121761(B2) 申请公布日期 2015.09.01
申请号 US201213670892 申请日期 2012.11.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 Nam Sung-hyun;Park Hae-seok
分类号 G01J5/20;G01J5/12;G01J5/04;G01J5/02;G01J5/06;G01J5/08 主分类号 G01J5/20
代理机构 Harness, Dickey & Pierce, PLC 代理人 Harness, Dickey & Pierce, PLC
主权项 1. An infrared detector, comprising: a substrate; a resonator spaced apart from the substrate, the resonator absorbing incident infrared light; a thermoelectric material layer contacting the resonator and having a variable resistance according to temperature variation due to the absorbed incident infrared light; a lead wire electrically connecting the thermoelectric material layer and the substrate; a heat separation layer, formed of a low thermal conductive laver, between the substrate and the thermoelectric material layer, the heat separation layer preventing heat from being transferred from the thermoelectric material layer to the substrate; a ground plane layer preventing the incident infrared light from proceeding toward the substrate, wherein the ground plane layer is between the thermoelectric material layer and the heat separation layer, and wherein the ground plane layer directly contacts the thermoelectric material layer.
地址 KR