| 摘要 |
本发明系关于一种用于以脉冲雷射沉积沉积材料之装置，该装置包括：真空室；配置于该真空室内之至少一个基材载具与基材，该基材具有第一、第二及第三方向，该三个方向中之每个互相垂直，其中该基材可藉由该基材载具在第一方向上移动；配置于该真空室内之靶材载具与靶材，及其中该靶材大体上在该基材之第二方向上延伸整个长度并平行于该基材；至少一用于照射该靶材，从而产生沉积于该基材上之材料之电浆的雷射，其中该雷射在该靶材上之入射位置可平行于该基材之第二方向移动；及用于控制该基材载具之移动及该雷射在该靶材上之入射位置之移动的控制器。; - at least one substrate holder with a substrate, arranged inside the vacuum chamber, the substrate having a first, second and third direction, each of the three directions perpendicular to each other, wherein the substrate is movable by the substrate holder in the first direction; - a target holder with a target, arranged inside the vacuum chamber and wherein the target extends over substantially the full length in the second direction of the substrate and parallel to the substrate; - at least one laser for irradiating the target, thereby creating a plasma of material that deposits on the substrate, wherein the position of incidence of the laser on the target is moveable parallel to the second direction of the substrate; and - a controller for controlling the movement of the substrate holder and the movement of the position of incidence of the laser on the target. |
