Non-volatile memory device

摘要

Provided is a non-volatile memory device having a zigzag body wiring. A well is disposed in a substrate. Word lines are arranged in an array, are disposed on the substrate and extend in a first direction. Inter-poly dielectric films are respectively between the substrate and the word lines. Floating gates are respectively disposed between the well and the inter-poly dielectric films. Tunnel oxide films are respectively disposed between the well and the floating gates. First bit lines and second bit lines, arranged periodically, are disposed over the word lines and extend in a second direction, wherein a first distance from the first bit lines to the substrate is smaller than a second distance from the second bit lines to the substrate.

主权项

1. A non-volatile memory device, comprising:
a well, disposed in a substrate; a plurality of word lines, arranged in an array, disposed on the substrate and extending in a first direction; a plurality of inter-poly dielectric films respectively between the substrate and the plurality of word lines; a plurality of floating gates, respectively disposed between the well and the plurality of inter-poly dielectric films; a plurality of tunnel oxide films, respectively disposed between the well and the plurality of floating gates; and a plurality of first bit lines and a plurality of second bit lines, arranged periodically, disposed over the plurality of word lines, and extending in a second direction, wherein a first distance from the first bit lines to the substrate is smaller than a second distance from the second bit lines to the substrate.