Series connected segmented LED

摘要

A light source and method for making the same are disclosed. The light source includes a conducting substrate, and a light emitting structure that is divided into segments. The light emitting structure includes a first layer of semiconductor material of a first conductivity type deposited on the substrate, an active layer overlying the first layer, and a second layer of semiconductor material of an opposite conductivity type from the first conductivity type overlying the active layer. A barrier divides the light emitting structure into first and second segments that are electrically isolated from one another. A serial connection electrode connects the first layer in the first segment to the second layer in the second segment. A power contact is electrically connected to the second layer in the first segment, and a second power contact electrically connected to the first layer in the second segment.

主权项

1. A method of fabricating a light emitting device, comprising:
depositing a light emitting structure on a first substrate, the light emitting structure comprising:
a first semiconductor layer formed on the first substrate,an active layer formed on the first semiconductor layer, anda second semiconductor layer formed on the active layer; patterning a metallic mirror layer over the second semiconductor layer and in electrical contact therewith; forming a barrier layer directly on the mirror layer and directly on the second semiconductor layer; forming a metallic bonding layer above the barrier layer; bonding the metallic bonding layer to a second substrate, wherein the second substrate comprises:
a region of a first conductivity type,a first isolation region of a second conductivity type, anda second isolation region of the second conductivity type; removing the first substrate; etching the light emitting structure to form a trench that exposes an upper surface of the barrier layer, wherein the trench divides the light emitting structure into first and second segments that are electrically isolated from one another at least by the first and second isolation regions; and forming a connection electrode that contacts at least a portion of an upper surface of the barrier layer in the first segment and connects the barrier layer in the first segment to the first semiconductor layer in the second segment.