发明名称 Method for fabricating a semiconductor device by bonding a layer to a support with curvature
摘要 The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object originally having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed.
申请公布号 US9123595(B2) 申请公布日期 2015.09.01
申请号 US201314103994 申请日期 2013.12.12
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Yamazaki Shunpei;Murakami Masakazu;Takayama Toru;Maruyama Junya
分类号 H01L21/58;H01L33/20;H01L21/67;H01L51/00;H01L27/12;H01L21/762;H01L29/786;H01L29/66;H01L21/20;H01L21/683;H01L27/15;G02F1/1333;H01L51/56;H01L27/32 主分类号 H01L21/58
代理机构 Fish & Richardson P.C. 代理人 Fish & Richardson P.C.
主权项 1. A method for fabricating a display device, the method comprising the steps of: forming a first layer containing metal over a first substrate; forming a second layer containing metal and oxygen over the first layer containing metal; forming a third layer containing a thin film transistor over the second layer containing metal and oxygen; forming a fourth layer containing a light emitting element over the third layer containing the thin film transistor; bonding a second flexible substrate with curvature to the fourth layer containing the light emitting element; peeling the third layer containing the thin film transistor and the fourth layer containing the light emitting element bonded to the second flexible substrate from the first substrate; and bonding a third substrate to the third layer containing the thin film transistor to sandwich the third layer containing the thin film transistor and the fourth layer containing the light emitting element between the second flexible substrate and the third substrate.
地址 Atsugi-shi, Kanagawa-ken JP