发明名称 |
Semiconductor memory circuit and data processing using the same |
摘要 |
The present invention relates to a semiconductor memory circuit enabling stable data transmission in a high frequency operation and a data processing system using the same. The data processing system includes a semiconductor memory circuit configured to output data, corresponding to a read command, in response to an external strobe signal, and a controller configured to provide the semiconductor memory circuit with the read command and the strobe signal related to the read command. |
申请公布号 |
US9123398(B2) |
申请公布日期 |
2015.09.01 |
申请号 |
US201213602129 |
申请日期 |
2012.09.01 |
申请人 |
SK Hynix Inc. |
发明人 |
Lee Dong Uk |
分类号 |
G11C7/00;G11C7/10 |
主分类号 |
G11C7/00 |
代理机构 |
William Park & Associates Ltd. |
代理人 |
William Park & Associates Ltd. |
主权项 |
1. A semiconductor memory circuit, comprising:
a command decoder configured to generate a read command by decoding a command signal based on a clock signal; a data path activation unit configured to generate a selection signal in response to an address signal and the read command; a memory block configured to provide a signal line with data corresponding to the selection signal; an output latch unit configured to output the data of the signal line in response to data output enable signals; and an output timing adjustment unit configured to generate the data output enable signals which are criteria for an external strobe signal by adjusting a timing of the read command in response to the strobe signal. |
地址 |
Gyeonggi-do KR |