发明名称 |
Charge injection and drain-based electrical overstress (EOS) protection apparatus and method |
摘要 |
An electrical overstress (EOS) protection circuit that at least partially neutralizes or compensates for undershoot and overshoot in first and second signals that are communicated using differential signaling, such as with USB communications. For an undershoot, the EOS protection circuit injects charge into pads that receive the first and second signals. For an overshoot, the EOS protection circuit drains charge from the pad that receives the second signal and injects charge into the pad that receives the first signal. |
申请公布号 |
US9124084(B2) |
申请公布日期 |
2015.09.01 |
申请号 |
US201113997085 |
申请日期 |
2011.11.03 |
申请人 |
INTEL CORPORATION |
发明人 |
Shinde Suhas Vishwasrao |
分类号 |
H02H9/00;H03K19/003;H02H1/00;H02H1/04;H02H3/22;H02H9/06 |
主分类号 |
H02H9/00 |
代理机构 |
Schwabe Williamson & Wyatt PC |
代理人 |
Schwabe Williamson & Wyatt PC |
主权项 |
1. An apparatus, comprising:
an electrical overstress (EOS) protection circuit configured to inject charge in response to an undershoot of first and second signals, and configured to drain charge in response to an overshoot of at least one of the first and second signals. |
地址 |
Santa Clara CA US |