发明名称 |
Electronic device and method of fabricating the same |
摘要 |
Provided are an electronic device and a fabrication method thereof. The electronic device according to the concept of the present invention includes auxiliary interconnections disposed on a substrate, a light extraction layer that is provided on the substrate and fills between the auxiliary interconnection, and a first electrode provided on the auxiliary interconnections and the light extraction layer, wherein the light extraction layer may have a first surface facing the substrate and a second surface opposite to the first surface, the first surface may have protrusions, and the auxiliary interconnections may include a material having a lower resistance than the first electrode. Since electrical properties of the electronic device are improved, uniform light emission characteristics may be realized. |
申请公布号 |
US9123914(B2) |
申请公布日期 |
2015.09.01 |
申请号 |
US201414269609 |
申请日期 |
2014.05.05 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE;KOREA ELECTROTECHNOLOGY RESEARCH INSTITUTE;KOREA INSTITUTE OF MACHINERY & MATERIALS |
发明人 |
Lee Jeong Ik;Lee Jonghee;Cho Doo-Hee;Han Jun-Han;Lee Geon-Woong;Han Joong-Tak;Kim Do-Geun;Jung Sunghoon |
分类号 |
H01L51/52;H01L51/56 |
主分类号 |
H01L51/52 |
代理机构 |
Rabin & Berdo, P.C. |
代理人 |
Rabin & Berdo, P.C. |
主权项 |
1. A method of fabricating an electronic device, the method comprising:
providing a supporting substrate in which auxiliary interconnections are formed; forming a light extraction layer on the supporting substrate, wherein the light extraction layer fills between the auxiliary interconnections and has a first surface and a second surface that is opposite to the first surface, wherein the second surface faces the supporting substrate; forming a substrate on the first surface of the light extraction layer; removing the supporting substrate to expose the second surface of the light extraction layer; and sequentially forming a first electrode, an intermediate layer, and a second electrode on the second surface of the light extraction layer. |
地址 |
Daejeon KR |