Semiconductor inspection device and semiconductor inspection method using the same

摘要

Provided are a semiconductor inspection device and a semiconductor inspection method such that in a specimen image in a single field of view obtained by an electron microscope, it is possible to suppress variations in the edge position measurement error attributable to the materials and structures of the lower layers of measured patterns by a first method, wherein the area in the field of view obtained by electron beam scanning is divided into a plurality of regions on the basis of information regarding the structures and materials of the object to be observed and the electron beam scanning conditions are changed for individual regions (805, 806), a second method, wherein, the image processing conditions are changed for individual regions resulting from division of the obtained images, or a third method, wherein the edge detection conditions are changed for individual regions resulting from the division within the edge inspection regions of the obtained images.

主权项

1. A semiconductor inspection device evaluating a 2D profile by detecting an edge of a pattern from an image acquired by observing the pattern on a substrate by scanning an electron-beam, comprising:
a storage device previously storing design data of the pattern or data of a pattern profile estimated through the whole patterning process, and data of the pattern and a material configuring a background of the pattern or a structure of a background of the pattern; and an arithmetic device having a comparison function of comparing the design data of the pattern or the data of the pattern profile estimated through the whole patterning process which is stored in advance with the data of the image acquired through observation, a dividing function of dividing the image into a plurality of areas for each expected area, in one viewing field, when reaction to the electron-beam incident in the observation area is different by using a result of operating the comparison function and the data of the material configuring the background of the pattern or the structure which is stored in advance, and a function of calculating a linewidth profile by detecting the edge of the pattern from an image acquired by using image-processing in the plural areas under different image processing conditions; wherein the data of the material data includes data regarding permittivity, and the image processing includes processing that blurs the image in accordance with the permittivity data that influences charge-up.