| 主权项 |
1. A method for spatially resolved determination of a series resistance of a semiconductor structure, which is a solar cell (1) or a preliminary stage of a solar cell (1), comprising at least one pn junction and contacts for electrical contacting of the semiconductor structure, the method comprising the following method steps:
A producing luminescence radiation in the semiconductor structure under a measurement condition A, in which an electrical voltage VA exists between contacts of the semiconductor structure, and, for each of a plurality of locations of the semiconductor structure, measuring a local intensity ILA,i of a luminescence radiation emanating from this location, B producing luminescence radiation in the semiconductor structure under a measurement condition B in which an electrical voltage VB exists between the contacts of the semiconductor structure, and, for each of the plurality of locations, measuring local intensities ILB,i of a luminescence radiation emanating from this location, with a larger current flowing between the contacts of the semiconductor structure under measurement condition B than under measurement condition A, C determining, for the plurality of the specified locations of the semiconductor structure, a local calibration parameter CV,i for a specified mathematical relation between the local intensity of the luminescence radiation and the voltage locally present at the location on the semiconductor element, the determination of the local calibration parameters CV,i taking place at least as a function of the intensities ILA,i of the luminescence radiation measured in step A and the voltage VA existing between the contacts of the semiconductor structure under measurement condition A, D determining a local series resistances RS,i for the plurality of the specified locations of the semiconductor structure, in each case at least as a function of at least one local intensity ILB,i of the luminescence radiation measured in step B and at least one local calibration parameter CV,i determined in step C, and
in step D, the local series resistances RS,i are each additionally determined as a function of a global series resistance RSg of the semiconductor structure that is identically specified for all of the local series resistances,wherein the local series resistances RS,i are each scaled with a global scaling factor f that is identical for all the local series resistances, the global scaling factor f being determined such that the local series resistances RS,i have a specified mathematical relation to the global series resistance RSg. |
