Planar metrology pad adjacent a set of fins of a fin field effect transistor device

摘要

Approaches for providing a substrate having a planar metrology pad adjacent a set of fins of a fin field effect transistor (FinFET) device are disclosed. Specifically, the FinFET device comprises a finned substrate, and a planar metrology pad formed on the substrate adjacent the fins in a metrology measurement area of the FinFET device. Processing steps include forming a first hardmask over the substrate, forming a photoresist over a portion of the first hardmask in the metrology measurement area of the FinFET device, removing the first hardmask in an area adjacent the metrology measurement area remaining exposed following formation of the photoresist, patterning a set of openings in the substrate to form the set of fins in the FinFET device in the area adjacent the metrology measurement area, depositing an oxide layer over the FinFET device, and planarizing the FinFET device to form the planar metrology pad in the metrology measurement area.

主权项

1. A method for forming a device, the method comprising:
forming a first hardmask over a substrate; forming a photoresist over a portion of the first hardmask in a metrology measurement area of the device; removing the first hardmask in an area adjacent the metrology measurement area; patterning a set of openings in the substrate to form a set of fins in the area adjacent the metrology measurement area; depositing an oxide layer over the device; and planarizing the device to form a planar metrology pad in the metrology measurement area.