功率元件的制造方法;METHOD FOR PRODUCING POWER DEVICE

摘要

本发明之目的在于提供功率元件的制造方法，该制造方法系可对应于晶圆薄化的严格要求，生产率优良的功率元件制造方法，更进一步，系能量损失少，散热性优良之功率元件的制造方法。;本发明之功率元件的制造方法，系依序具有下列(1)至(7)的步骤：;(1)至少于晶圆表面形成电极之步骤;(2)背面研磨(BG)晶圆之步骤;(3)于晶圆背面形成电极(背垫金属(BM))之步骤;(4)于晶圆背面贴附玻璃基板之步骤;(5)于前述晶圆表面的电极上藉由无电解镀覆形成UBM之步骤;(6)剥离前述晶圆背面的玻璃基板之步骤;(7)于晶圆背面贴上切割胶带，进行切割，并自切割胶带进行拾取，藉此进行晶片化之步骤;The method for producing a power device comprises the following steps (1) to (7) in this order: ;(1) a step of at least forming an electrode on a wafer surface ;(2) a step of back-grinding (BG) the wafer ;(3) a step of forming an electrode (back metal, BM) on the back side of the wafer ;(4) a step of laminating a glass substrate on the back side of the wafer ;(5) a step of forming a UBM on the electrode on the wafer surface by electroless lating ;(6) a step of striping the glass substrate on the back side of the wafer ;(7) a step of dicing by pasting dicing tape to the back side of the wafer, performnig dicing, and picking up from the dicing tape.