Programming operations in a memory device

摘要

Methods for sensing, method for programming, memory devices, and memory systems are disclosed. In one such method for sensing, a counting circuit generates a count output and a translated count output. The count output is converted into a time varying voltage that biases a word line coupled to memory cells being sensed. Target data for each memory cell is stored in a data cache associated with that particular memory cell. When it is detected that a memory cell has turned on, the translated count output associated with the count output that is indicative of the voltage level that turned on the memory cell is compared to the target data. The comparison determines the state of the memory cell.

主权项

1. A method for programming a memory cell, the method comprising:
storing target data into latches associated with the memory cell wherein the target data is one of data to be programmed or data representative of a minimum programmed threshold voltage; biasing a control gate of the memory cell with a programming pulse to program the target data; and performing a program verify operation on the memory cell.