| 发明名称 | Semiconductor device | ||
| 摘要 | A semiconductor device comprises: a semiconductor element including an electrode; a leading line electrically connected to the electrode, passing above the electrode, and led to a side thereof; and a current sensor sensing current flowing through the leading line. The current sensor includes a magneto-resistance element placed above the electrode and below the leading line. A resistance value of the magneto-resistance element varies linearly according to magnetic field generated by the current. | ||
| 申请公布号 | US9121899(B2) | 申请公布日期 | 2015.09.01 |
| 申请号 | US201414305693 | 申请日期 | 2014.06.16 |
| 申请人 | MITSUBISHI ELECTRIC CORPORATION | 发明人 | Akiyama Hajime;Okada Akira |
| 分类号 | G01R31/28;B82Y25/00;G01R15/20;G01R33/09;H01F10/32 | 主分类号 | G01R31/28 |
| 代理机构 | Oblon, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A semiconductor device comprising: a semiconductor element including an electrode; a leading line electrically connected to the electrode, passing above the electrode, and led to a side thereof; a current sensor sensing current flowing through the leading line, the current sensor including a magneto-resistance element placed above the electrode and below the leading line; and a circuit that reads a resistance value of the magneto-resistance element, the circuit being in a same chip as the semiconductor element, wherein the resistance value of the magneto-resistance element varies linearly according to a magnetic field generated by the current. | ||
| 地址 | Chiyoda-ku JP | ||