发明名称 |
Silicon carbide synthesis |
摘要 |
This disclosure concerns a method of making silicon carbide involving adding agricultural husk material to a container, creating a vacuum or an inert atmosphere inside the container, applying conventional heating or microwave heating, heating rapidly, and reacting the material and forming silicon carbide (SiC). |
申请公布号 |
US9120679(B2) |
申请公布日期 |
2015.09.01 |
申请号 |
US201414299901 |
申请日期 |
2014.06.09 |
申请人 |
The United States of America, as represented by the Secretary of the Navy |
发明人 |
Qadri Syed B;Fliflet Arne W;Imam M Ashraf;Rath Bhakta B;Gorzkowski, III Edward P |
分类号 |
C01B31/36;B82Y40/00;B82Y30/00 |
主分类号 |
C01B31/36 |
代理机构 |
US Naval Research Laboratory |
代理人 |
US Naval Research Laboratory ;Hunnius Stephen T. |
主权项 |
1. A method of making SiC comprising:
adding agricultural husk material to a container; wherein the container is a covered boron nitride crucible;creating a vacuum or an inert atmosphere inside the container;
applying heat; heating the agricultural husk material; wherein the step of heating is accomplished by using a millimeter-wave beam and wherein the frequency of the millimeter-wave beam is about 83 GHz, the total beam power is about 5 kW, and the power density is about 0.3 kW/cm2; and reacting the agricultural husk material and forming silicon carbide; wherein the silicon carbide is nanoparticles and nanorods of SiC in a pure form. |
地址 |
Washington DC US |