发明名称 Silicon carbide synthesis
摘要 This disclosure concerns a method of making silicon carbide involving adding agricultural husk material to a container, creating a vacuum or an inert atmosphere inside the container, applying conventional heating or microwave heating, heating rapidly, and reacting the material and forming silicon carbide (SiC).
申请公布号 US9120679(B2) 申请公布日期 2015.09.01
申请号 US201414299901 申请日期 2014.06.09
申请人 The United States of America, as represented by the Secretary of the Navy 发明人 Qadri Syed B;Fliflet Arne W;Imam M Ashraf;Rath Bhakta B;Gorzkowski, III Edward P
分类号 C01B31/36;B82Y40/00;B82Y30/00 主分类号 C01B31/36
代理机构 US Naval Research Laboratory 代理人 US Naval Research Laboratory ;Hunnius Stephen T.
主权项 1. A method of making SiC comprising: adding agricultural husk material to a container; wherein the container is a covered boron nitride crucible;creating a vacuum or an inert atmosphere inside the container; applying heat; heating the agricultural husk material; wherein the step of heating is accomplished by using a millimeter-wave beam and wherein the frequency of the millimeter-wave beam is about 83 GHz, the total beam power is about 5 kW, and the power density is about 0.3 kW/cm2; and reacting the agricultural husk material and forming silicon carbide; wherein the silicon carbide is nanoparticles and nanorods of SiC in a pure form.
地址 Washington DC US