| 发明名称 |
Semiconductor device and method of fabricating the same |
| 摘要 |
Provided is a semiconductor device. The semiconductor device includes: a first semiconductor layer having a first region with a first device and a second region with a second device; a device isolation pattern provided in the first semiconductor layer and electrically separating the first device and the second device from each other; a drain provided on a lower surface of the first region of the first semiconductor layer; and a second semiconductor layer provided on a lower surface of the second region of the first semiconductor layer. |
| 申请公布号 |
US9123548(B1) |
申请公布日期 |
2015.09.01 |
| 申请号 |
US201414449028 |
申请日期 |
2014.07.31 |
| 申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
Koo Jin-Gun;Won Jong Il;Bae Hyun-cheol;Kim Sang Gi;Yang Yil Suk |
| 分类号 |
H01L29/06;H01L29/10;H01L21/8249 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a first semiconductor layer having a first region with a first device and a second region with a second device; a device isolation pattern provided in the first semiconductor layer and electrically separating the first device and the second device from each other; a drain provided on a lower surface of the first region of the first semiconductor layer; and a second semiconductor layer provided on a lower surface of the second region of the first semiconductor layer. |
| 地址 |
Daejeon KR |
