发明名称 Graphene production
摘要 Technologies described herein are generally related to graphene production. In some examples, a system is described that may include a first container, a second container, and/or a chamber. The first container may include a first solution with a reducing agent, while the second container may include a second solution with graphene oxide. The chamber may be in operative relationship with the first and the second containers, and configured effective to receive the first and second solutions and provide reaction conditions that facilitate contact of the first and second solutions at an interfacial region sufficient to produce graphene at the interfacial region.
申请公布号 US9120676(B2) 申请公布日期 2015.09.01
申请号 US201213641908 申请日期 2012.03.06
申请人 Empire Technology Development LLC 发明人 Miller Seth Adrian
分类号 C01B31/04;B01J19/22;B82Y30/00;B82Y40/00 主分类号 C01B31/04
代理机构 Moritt Hock & Hamroff LLP 代理人 Moritt Hock & Hamroff LLP ;Rubin, Esq. Steven S.
主权项 1. A system configured to produce graphene, the system comprising: a first container including a first solution, wherein the first solution has a first density and includes a water immiscible solvent including a reducing agent; a second container including a second solution, wherein the second solution has a second density, the second density being different from the first density and the second solution includes graphene oxide; a chamber in operative relationship with the first and the second container, the chamber arranged to: receive the first and second solutions from the first and second containers, respectively, where surface tension forces caused by a difference between the first and second densities cause the first and second solution to remain separate in the chamber except at a planar interfacial region where the first and second solutions contact; andfacilitate contact of the first and second solutions at the planar interfacial region under sufficient reaction conditions to produce graphene in a planar configuration by reduction of the graphite oxide at the planar interfacial region.
地址 Wilmington DE US