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发明名称
半导体装置及其制造方法;SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
摘要
本发明揭露一种半导体装置,包括一基底,其具有一隔离结构位于其中。一电容元件位于隔离结构上,且包括一多晶矽电极、设置于多晶矽电极上的一绝缘层以及设置于绝缘层上的一金属电极。本发明亦揭露一种半导体装置的制造方法。
申请公布号
TW201533904
申请公布日期
2015.09.01
申请号
TW103105054
申请日期
2014.02.17
申请人
世界先进积体电路股份有限公司 VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
发明人
罗宗仁 LAO, CHUNG REN;刘兴潮 LIU, HSING CHAO;吴宗宪 WU, TZUNG HSIAN;黄志仁 HUANG, CHIH JEN
分类号
H01L29/78(2006.01);H01L21/28(2006.01)
主分类号
H01L29/78(2006.01)
代理机构
代理人
洪澄文颜锦顺
主权项
地址
新竹县新竹科学工业园区园区三路123号 TW
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