发明名称 Suppression of amplified spontaneous emission (ase) within laser planar waveguide devices
摘要 <p>Described herein are devices and techniques for suppressing parasitic modes in planar waveguide amplifier structures. One or more of the side and end facets of a planar waveguide amplifier are angled with respect to a fast axis defined in a transverse plane perpendicular to a core region. A relationship between glancing in-plane angles of incidence and threshold bevel anglesθT can be used to select side bevel anglesθS to suppress parasitics by redirecting amplified spontaneous emission (ASE) from the core. It is possible to select the one or more bevel anglesθS to be great enough to substantially redirect all but ballistic photons of any guided modes, effectively narrowing a numerical aperture of the planar waveguide amplifier along a slow axis, defined in a transverse plane perpendicular to the fast axis. Beneficially, such improvements can be realized for three part waveguide structures (e.g., cladding-core-cladding), with substantially smooth edge facets.</p>
申请公布号 IL239720(D0) 申请公布日期 2015.08.31
申请号 IL20150239720 申请日期 2015.06.30
申请人 RAYTHEON COMPANY 发明人
分类号 H01S 主分类号 H01S
代理机构 代理人
主权项
地址