SEMICONDUCTOR FILM, TRANSISTOR, SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND ELECTRONIC APPLIANCE

摘要

An objective of the present invention is to give a semiconductor device satisfactory electric characteristics, or provide a highly reliable semiconductor device. An electronic line having a probe whose diameter has a half width of 1 nm is used. When a location of an oxide semiconductor film and a location of the electronic line are moved relative to each other on a surface on which the oxide semiconductor film is to be formed, and light is emitted onto the surface to observe a plurality of electronic diffraction patterns, the plurality of electronic diffraction patterns consist of fifty or more electronic diffraction patterns observed at different sites; a sum of a percentage of first electronic diffraction patterns and a percentage of second electronic diffraction patterns is 100%; the percentage of first electronic diffraction patterns is 90% or higher; the first electronic diffraction patterns have observation points whose c-axis is directed towards a schematically perpendicular direction to the surface on which the oxide semiconductor film is to be formed; and the second electronic diffraction patterns have asymmetric observation points or observation areas arranged on a circle.