| 摘要 |
<p>The present invention relates to a nonvolatile memory device and a method for programming the same. More specifically, the present invention relates to a variable resistance memory device and a method for programming the same. According to the present invention, the non-volatile memory device includes: a memory cell array including memory cells wherein data are stored by change in a resistance value; an input and output driver connected with the cell memory array through a plurality of word lines, a first switch group connected with the word lines, a plurality of bit lines, and a second switch group connected with the bit lines; and a control logic that controls the input and output driver to pre-charge a selection word line connected with a memory cell, selected before switches included in the first switch group and the second switch group are activated, and a selected bit line with predetermined bias voltage when the program is operated.</p> |
