BURIED HETERO-JUNCTION LASER DIODE FOR HIGH SPEED MODULATION

摘要

A buried hetero-junction laser diode comprises a light generating region including an active layer formed on a substrate; a first trenches formed in both sides of the light generating region; an optical confinement region with a width between 5 to 10 μm being formed in an upper part of the light generating region by surrounding the light generating region and including current blocking layers formed in the first trenches; and a second trenches formed in both sides of the optical confinement region.