SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

The present technology relates to a semiconductor device and a manufacturing thereof. The semiconductor includes: a memory block in which a drain select line, word lines, and a source line are stacked to be placed apart from one another in the vertical direction of a semiconductor substrate; and a periphery circuit including a switching device connected to a bit line arranged on a lower end of a vertical channel film vertically penetrating the drain select line, the word lines, and the source line.